The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2013
Filed:
Feb. 02, 2012
Yi-keng Fu, Hsinchu County, TW;
Ren-hao Jiang, Taichung, TW;
Yen-hsiang Fang, New Taipei, TW;
Bo-chun Chen, Tainan, TW;
Chia-feng Lin, Taichung, TW;
Yi-Keng Fu, Hsinchu County, TW;
Ren-Hao Jiang, Taichung, TW;
Yen-Hsiang Fang, New Taipei, TW;
Bo-Chun Chen, Tainan, TW;
Chia-Feng Lin, Taichung, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A light emitting diode including a GaN substrate, a first type semiconductor layer, a light emitting layer, a second type semiconductor layer, a first electrode, and a second electrode is provided. The GaN substrate has a first surface and a second surface opposite thereto, and the second surface has a plurality of protuberances, the height of the protuberance is h μm and the distribution density of the protuberance on the second surface is d cm, wherein 9.87×10≦hd, and h≦1.8. The first type semiconductor is disposed on the first surface of the GaN substrate. The light emitting layer is disposed on a partial region of the first semiconductor layer, and the wavelength of the light emitted by the light emitting layer is from 375 nm to 415 nm. The second semiconductor layer is disposed on the light emitting layer.