The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2013
Filed:
Dec. 27, 2010
Applicants:
Ren-hao Jiang, Taichung, TW;
Chih-wei HU, Taoyuan, TW;
Inventors:
Ren-Hao Jiang, Taichung, TW;
Chih-Wei Hu, Taoyuan, TW;
Assignee:
Industrial Technology Research Institute, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
Abstract
A nitride semiconductor LED device including an N-type doped layer, an active layer and a P-type doped layer is provided. The active layer is disposed on the N-type doped layer and includes at least one quantum well structure. The quantum well structure includes two quantum barrier layers and a quantum well sandwiched between the quantum barrier layers. The quantum barrier layer is a super-lattice structure including a quaternary nitride semiconductor. The P-type doped layer is disposed on the active layer.