Ithaca, NY, United States of America

Reet Chaudhuri

USPTO Granted Patents = 3 

Average Co-Inventor Count = 4.3

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2021-2023

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3 patents (USPTO):Explore Patents

Title: Innovations of Reet Chaudhuri

Introduction

Reet Chaudhuri is an accomplished inventor based in Ithaca, NY (US). He has made significant contributions to the field of electronics, particularly in the development of high-performance transistors. With a total of 3 patents to his name, Chaudhuri's work is recognized for its innovative approach and technical depth.

Latest Patents

One of his latest patents focuses on RF high-electron-mobility transistors that include group III-N stress neutral barrier layers with high breakdown voltages. This High Electron Mobility Transistor (HEMT) device features an AlN buffer layer on a substrate and an epi-GaN channel layer on the AlN buffer layer. The design incorporates an AlN barrier layer on the Epi-GaN channel layer to create a channel region. Additionally, a GaN drain region is recessed into the epi-GaN channel layer at one end of the channel region, while a GaN source region is recessed at the opposite end. The gate electrode is designed with a neck portion that extends above the AlN barrier layer, leading to a head portion with a greater width.

Another notable patent is for a high-voltage p-channel FET based on III-nitride heterostructures. This invention addresses the challenges of low p-type sheet resistance and includes devices with gate recess that utilize III-Nitride heterostructures.

Career Highlights

Reet Chaudhuri is affiliated with Cornell University, where he continues to push the boundaries of research in semiconductor technology. His work has garnered attention for its potential applications in various electronic devices.

Collaborations

Chaudhuri has collaborated with esteemed colleagues, including Samuel James Bader and Huili Grace Xing, who contribute to the innovative research environment at Cornell University.

Conclusion

Reet Chaudhuri's contributions to the field of electronics through his patents and research at Cornell University highlight his role as a leading inventor in high-performance transistor technology. His work continues to influence advancements in the industry.

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