Cornell University

Reet Chaudhuri

Huili Grace Xing

Samuel James Bader

Debdeep Jena

Jena Debdeep

Austin Hickman

A High Electron Mobility Transistor (HEMT) device can include an AlN buffer layer on a substrate and an epi-GaN channel layer on the AlN buffer layer. An AlN barrier layer can be on the Epi-GaN channel layer to provide a channel region in the epi-GaN channel layer. A GaN drain region can be recessed into the epi-GaN channel layer at a first end of the channel region and a GaN source region can be recessed into the epi-GaN channel layer at a second end of the channel region opposite the first end of the channel region. A gate electrode can include a neck portion with a first width that extends a first distance above the AlN barrier layer between the GaN drain region and the GaN source region to a head portion of the gate electrode having a second width that is greater than the first width.

RF high-electron-mobility transistors including group III-N stress neutral barrier layers with high breakdown voltages

III-Nitride heterostructures with low p-type sheet resistance and III-Nitride heterostructure devices with gate recess and devices including the III-Nitride heterostructures are disclosed.

High-voltage p-channel FET based on III-nitride heterostructures

The long-missing polarization-induced two-dimensional hole gas is finally observed in undoped Group III nitride semiconductor structures and in undoped Group II or Group III oxide semiconductor structures. Experimental results providing unambiguous proof that a 2D hole gas in GaN grown on AlN does not need acceptor doping, and can be formed entirely by the difference in the internal polarization fields across the semiconductor heterojunction are presented.

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Ithaca, NY, United States of America

Reet Chaudhuri