The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2021
Filed:
Jul. 19, 2019
Applicant:
Cornell University, Ithaca, NY (US);
Inventors:
Reet Chaudhuri, Ithaca, NY (US);
Samuel James Bader, Hillsboro, OR (US);
Jena Debdeep, Ithaca, NY (US);
Huili Grace Xing, Ithaca, NY (US);
Assignee:
Cornell University, Ithaca, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/267 (2006.01); H01L 29/66 (2006.01); H01L 29/04 (2006.01); H01L 29/20 (2006.01); H01L 29/225 (2006.01); H01L 29/205 (2006.01);
U.S. Cl.
CPC ...
H01L 29/267 (2013.01); H01L 29/04 (2013.01); H01L 29/045 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/225 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/7787 (2013.01);
Abstract
The long-missing polarization-induced two-dimensional hole gas is finally observed in undoped Group III nitride semiconductor structures and in undoped Group II or Group III oxide semiconductor structures. Experimental results providing unambiguous proof that a 2D hole gas in GaN grown on AlN does not need acceptor doping, and can be formed entirely by the difference in the internal polarization fields across the semiconductor heterojunction are presented.