The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2022
Filed:
Nov. 06, 2019
Applicant:
Cornell University, Ithaca, NY (US);
Inventors:
Samuel James Bader, Ithaca, NY (US);
Reet Chaudhuri, Ithaca, NY (US);
Huili Grace Xing, Ithaca, NY (US);
Debdeep Jena, Ithaca, NY (US);
Assignee:
Cornell University, Ithaca, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 27/092 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01); H01L 29/49 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 21/0254 (2013.01); H01L 21/28575 (2013.01); H01L 21/30612 (2013.01); H01L 27/092 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/41725 (2013.01); H01L 29/66462 (2013.01); H01L 29/0847 (2013.01); H01L 29/1033 (2013.01); H01L 29/42364 (2013.01); H01L 29/42376 (2013.01); H01L 29/452 (2013.01); H01L 29/495 (2013.01);
Abstract
III-Nitride heterostructures with low p-type sheet resistance and III-Nitride heterostructure devices with gate recess and devices including the III-Nitride heterostructures are disclosed.