Reed K Lawrence

Title: Reed K Lawrence: Innovator in Memory Cell Technology

Introduction

Reed K Lawrence is a notable inventor based in Purcellville, VA (US). He holds a total of 5 patents that showcase his contributions to the field of memory cell technology. His innovative work has significantly impacted the design and functionality of static random access memory (SRAM) circuits.

Latest Patents

One of his latest patents is focused on a single-event upset immune static random access memory cell circuit. This invention provides a method to harden a six-transistor (6-T) SRAM memory cell against single-event upsets by incorporating isolation-field effect transistors (iso-fets). These iso-fets are strategically connected between the reference voltage Vdd and the field-effect transistors corresponding to the inverters of the memory cell. The design includes control gates tied to the pull-up and pull-down transistors, enhancing the reliability of the memory cell. Another significant patent involves a technique to radiation-harden trench refill oxides. This method utilizes silicon-rich oxide films that generate silicon nanoclusters during deposition or annealing, effectively reducing radiation-induced shifts in the oxides.

Career Highlights

Throughout his career, Reed K Lawrence has worked with prominent organizations, including the United States Navy and BAE Systems Information and Electronic Systems Integration Inc. His experience in these companies has allowed him to develop and refine his innovative ideas in memory technology.

Collaborations

Reed has collaborated with notable professionals in his field, including Harold L Hughes and Patrick J McMarr. These collaborations have contributed to the advancement of his research and inventions.

Conclusion

Reed K Lawrence's contributions to memory cell technology through his patents and collaborations highlight his role as an influential inventor. His work continues to shape the future of SRAM technology and its applications.