The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 20, 2011

Filed:

Feb. 28, 2006
Applicants:

Harold L Hughes, West River, MD (US);

Bernard J Mrstik, Alexandria, VA (US);

Reed K Lawrence, Purcellville, VA (US);

Patrick J Mcmarr, Springfield, VA (US);

Inventors:

Harold L Hughes, West River, MD (US);

Bernard J Mrstik, Alexandria, VA (US);

Reed K Lawrence, Purcellville, VA (US);

Patrick J McMarr, Springfield, VA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/469 (2006.01);
U.S. Cl.
CPC ...
Abstract

Oxide films are deposited under conditions generating a silicon-rich oxide in which silicon nanoclusters form either during deposition or during subsequent annealing. Such deposition conditions include those producing films with optical indices (n) greater than 1.46. The method of the present invention reduces the TID radiation-induced shifts for the oxides.


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