Escondido, CA, United States of America

Raymond Pong

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Burroughs, Inc.. Active years: 1981.

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 30(Granted Patents)


Company Filing History:


Years Active: 1981

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Raymond Pong

Introduction

Raymond Pong is a notable inventor based in Escondido, California. He has made significant contributions to the field of integrated circuit fabrication. His innovative approach has led to the development of a unique method that enhances the efficiency of circuit design.

Latest Patents

Raymond Pong holds a patent for the "Single mask method of fabricating complementary integrated circuits." This method employs a single mask to define the active areas of various devices within an integrated circuit. A silicon oxide-silicon nitride layer is formed on the surface of a silicon wafer, which defines the location of subsequent oxide insulating layers. This innovative technique allows for the formation of respective active areas for different devices through selective ion implantation.

Career Highlights

Raymond Pong has had a distinguished career, working at Burroughs, Inc. His work has been instrumental in advancing the technology behind integrated circuits. His patent reflects his expertise and commitment to innovation in the field.

Collaborations

Throughout his career, Raymond has collaborated with notable colleagues, including Donald L Henderson, Sr. and Steven M Baldwin. These collaborations have contributed to the development of cutting-edge technologies in integrated circuit fabrication.

Conclusion

Raymond Pong's contributions to the field of integrated circuits exemplify the spirit of innovation. His patented method showcases his ability to enhance technology through creative solutions. His work continues to influence the industry and inspire future advancements.

Profile summary based on public USPTO records.
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