The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 1981
Filed:
Mar. 06, 1979
Applicant:
Inventors:
Donald L Henderson, Sr, Encinitas, CA (US);
Steven M Baldwin, Escondido, CA (US);
Raymond Pong, Escondido, CA (US);
Assignee:
Burroughs Corporation, Detroit, MI (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; B01J / ;
U.S. Cl.
CPC ...
148-15 ; 148187 ; 357 34 ; 357 43 ; 357 91 ;
Abstract
A method of fabricating an integrated circuit having a plurality of different devices, which method employs a single mask to define the active areas of all such devices. A silicon oxide-silicon nitride layer is formed on the surface of a silicon wafer so as to define the location of subsequent oxide insulating layers which in turn actually define all the active areas of the circuit. Respective active areas for the different devices can then be formed by selective ion implantation.