Burroughs, Inc.

Raymond Pong

Donald L Henderson, Sr

Steven M Baldwin

A method of fabricating an integrated circuit having a plurality of different devices, which method employs a single mask to define the active areas of all such devices. A silicon oxide-silicon nitride layer is formed on the surface of a silicon wafer so as to define the location of subsequent oxide insulating layers which in turn actually define all the active areas of the circuit. Respective active areas for the different devices can then be formed by selective ion implantation.

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Escondido, CA, United States of America

Raymond Pong