This inventor holds 5 USPTO granted patents. Top assignee: Infineon Technologies Ag. Active years: 2007-2009.
Company Filing History:
Years Active: 2007-2009
Title: Rath Ung: Innovator in DRAM Technology
Introduction
Rath Ung is a notable inventor based in Apex, NC (US), recognized for his contributions to the field of dynamic random-access memory (DRAM) technology. With a total of 5 patents to his name, Ung has made significant advancements that enhance the performance and efficiency of DRAM devices.
Latest Patents
One of Rath Ung's latest patents is titled "Test mode for programming rate and precharge time for DRAM activate-precharge cycle." This invention provides a programmable activate-precharge cycle for a DRAM device. The activate and precharge signals associated with this cycle are generated based on the programmed rate and precharge time relative to the internal clock of the DRAM device. These signals are coupled to the wordlines of the DRAM device and can be switched from one wordline to another under internal or external control. This innovation allows for the testing of various functions of the DRAM device while the signals are coupled to the wordline.
Another significant patent is "Random access memory including circuit to compress comparison results." This invention features an array of memory cells designed to store data, along with a first circuit that compares test data and memory cell data to obtain comparison results. A second circuit compresses these comparison results and stores the compressed data, enhancing the efficiency of data handling in memory systems.
Career Highlights
Rath Ung is currently employed at Infineon Technologies AG, a leading company in semiconductor solutions. His work at Infineon has allowed him to focus on innovative technologies that push the boundaries of memory performance.
Collaborations
Throughout his career, Rath has collaborated with notable colleagues, including Norbert Rehm and Jan Zieleman. These collaborations have fostered an environment of innovation and creativity, contributing to the development of cutting-edge technologies in the field.
Conclusion
Rath Ung's contributions to DRAM technology through his patents and work at Infineon Technologies AG highlight his role as a significant innovator in the industry. His advancements continue to influence the performance and efficiency of memory devices, showcasing the importance of innovation in technology.