Rann Shyan Yeh

Title: Rann Shyan Yeh: Innovator in Semiconductor Technology

Introduction

Rann Shyan Yeh is a prominent inventor based in Hsin-Chu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on developing advanced semiconductor devices that enhance performance and efficiency.

Latest Patents

Rann Shyan Yeh's latest patents include innovative designs for semiconductor devices. One of his notable inventions describes a semiconductor device that features multiple low voltage N-well (LVNW) areas biased at different potentials. These areas are isolated from a substrate by a common N-buried layer (NBL) and at least one high voltage N-well (HVNW) area. The LVNW areas are coupled to the common, subjacent NBL through a common P-buried layer (PBL). Another patent outlines a method and apparatus for a semiconductor device that includes high voltage MOS transistors. This invention provides a substrate with low voltage and high voltage regions that are separated from each other, utilizing advanced isolation techniques.

Career Highlights

Rann Shyan Yeh is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His expertise in semiconductor technology has positioned him as a key player in the development of innovative solutions that meet the demands of modern electronics.

Collaborations

Throughout his career, Rann Shyan Yeh has collaborated with notable colleagues, including Chi-Hsuen Chang and Jun Xiu Liu. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Rann Shyan Yeh's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the industry. His work continues to shape the future of semiconductor devices, making significant strides in performance and efficiency.