IDiyas

For the Inventor, By the Inventor

Bengaluru, India

Rakesh Kumar Sinha

USPTO Granted Patents = 14 

Average Co-Inventor Count = 3.5

ph-index = 5

Forward Citations = 59(Granted Patents)


Company Filing History:

goldMedal14 out of 41,326 
 
Qualcomm Incorporated
 patents

Years Active: 2015-2024

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14 patents (USPTO):Explore Patents
1. 12057829 - Bias current receiver with selective coupling circuit (2024-08-06),
2. 11736105 - Bias current receiver with selective coupling circuit (2023-08-22),
3. 10901454 - Clock buffering to reduce memory hold time (2021-01-26),
4. 10614865 - Boost generation circuitry for memory (2020-04-07),
5. 10147483 - Robust write driver scheme for static random access memory compilers (2018-12-04),
6. 10140044 - Efficient memory bank design (2018-11-27),
7. 9947419 - Apparatus and method for implementing design for testability (DFT) for bitline drivers of memory circuits (2018-04-17),
8. 9928889 - Bitline precharge control and tracking scheme providing increased memory cycle speed for pseudo-dual-port memories (2018-03-27),
9. 9875790 - Boost charge recycle for low-power memory (2018-01-23),
10. 9875776 - Bit writability implementation for memories (2018-01-23),
11. 9837144 - Apparatus and method for controlling boost capacitance for low power memory circuits (2017-12-05),
12. 9111589 - Memory timing circuit (2015-08-18),
13. 9030863 - Read/write assist for memories (2015-05-12),
14. 8929153 - Memory with multiple word line design (2015-01-06),

Title: Rakesh Kumar Sinha - Innovator at Qualcomm Inc.

Introduction

Rakesh Kumar Sinha is a notable inventor based in Bengaluru, India, recognized for his contributions to integrated circuit design. With a remarkable portfolio of 14 patents, Rakesh has proven to be a significant asset in the field of electronics and communication.

Latest Patents

One of Rakesh's latest innovations is a bias current receiver with a selective coupling circuit. This integrated circuit (IC) features a current mirror composed of two field effect transistors (FETs). The first FET includes a first drain, gate, and source, with the first source coupled to a voltage rail. The second FET's gate is coupled to the first FET's gate, enhancing the design's efficiency. The selective coupling circuit enables the first drain of the first FET to connect to the gates of both FETs based on voltage conditions, marking a crucial development in modern electronics.

Career Highlights

Rakesh is currently employed at Qualcomm Incorporated, a leading company in the telecommunications sector. His role involves spearheading innovative projects and developing cutting-edge technologies that contribute to the industry's growth.

Collaborations

Throughout his career, Rakesh has collaborated with talented colleagues like Sharad Kumar Gupta and Priyankar Mathuria. Together, they have worked on various projects that push the boundaries of technology, showcasing mutual expertise and teamwork in engineering innovations.

Conclusion

Rakesh Kumar Sinha's contributions to technology through his inventive spirit at Qualcomm Incorporated highlight his prominence in the field of integrated circuits. His patented innovations not only reflect his ingenuity but also enhance the capabilities of electronic devices, positioning him as a key figure in the industry.

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