Raghuveer Mallavarpu

Title: Innovations of Raghuveer Mallavarpu

Introduction

Raghuveer Mallavarpu is a notable inventor based in Boxborough, MA (US). He has made significant contributions to the field of electronics, particularly in the development of field effect transistor (FET) structures. With a total of six patents to his name, his work continues to influence modern technology.

Latest Patents

One of Raghuveer Mallavarpu's latest patents is a field effect transistor (FET) structure with integrated gate connected diodes. This innovative structure includes a plurality of field effect transistors (FETs) connected between a common input and a common output. Each FET comprises a source region, a drain region, and a gate electrode that controls carriers through a channel region. Additionally, the structure features a plurality of diodes, each associated with a corresponding FET, having an electrode in Schottky contact with a diode region of the FET. The design ensures that the gate electrode and the diode electrode extend along parallel lines, with the source region, drain region, channel region, and diode region aligned along a common line.

Career Highlights

Raghuveer Mallavarpu is currently employed at Raytheon Company, where he applies his expertise in electronics and semiconductor technology. His work at Raytheon has allowed him to further develop his innovative ideas and contribute to cutting-edge projects in the industry.

Collaborations

Throughout his career, Raghuveer has collaborated with esteemed colleagues such as John P Bettencourt and George H MacMaster. These collaborations have fostered a creative environment that has led to the advancement of various technologies.

Conclusion

Raghuveer Mallavarpu's contributions to the field of electronics, particularly through his patents and work at Raytheon Company, highlight his role as an influential inventor. His innovative designs continue to shape the future of technology.