The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2001
Filed:
Oct. 29, 1998
Raghuveer Mallavarpu, Boxborough, MA (US);
Douglas A. Teeter, Arlington, MA (US);
Raytheon Company, Lexington, MA (US);
Abstract
A method is provided for large signal modeling of a field effect transistor. The method includes establishing a small signal model for the transistor, such model having a gate-source capacitance C,and a drain-gate capacitance C,, both being functions of a gate-source voltage V,and a drain-source voltage V,. The s-parameters of the transistor are measured and curve fitting is applied to the measured s-parameters to establish small signal model parameters. The small signal model parameters include gate-source capacitance C,as a function of V,and V,and gate-drain capacitance C,as a function of V,and V,. Curve fitting is applied to C,and C,to establish large signal gate charge fitting parameters. The established large signal gate charge fitting parameters are used to express a gate-source charge Q,and a gate-drain charge Q,as functions of V,and a gate-drain voltage V,in a large signal model for the transistor.