Location History:
- Eatontown, NJ (US) (1996 - 1998)
- Scotch Plains, NJ (US) (1998 - 2024)
Company Filing History:
6 out of 36 
3 out of 4,208 
3 out of 9,364 
Years Active: 1996-2025
Title: Rafael Ben-Michael: Innovator in High-Sensitivity Photodetectors
Introduction
Rafael Ben-Michael is a prominent inventor based in Scotch Plains, NJ (US), known for his significant contributions to the field of photodetectors. With a total of 16 patents to his name, he has made remarkable advancements in high-sensitivity avalanche photodiodes.
Latest Patents
His latest patents include innovations in high-sensitivity avalanche photodetectors. These patents disclose avalanche photodiodes (APDs) particularly useful for high-sensitivity Geiger-mode APDs formed using an array of micro-cells. The photodetector is constructed on a semiconductor substrate of indium phosphide (InP) with epitaxial layers, including indium gallium arsenide (InGaAs) as the photodetecting layer. The design incorporates n-doped InP on one side and layers of InP with p-doped regions on the opposite side. The p-doped regions help define an array of micro-cells arranged in a hexagonal pattern. A well is etched through the epitaxial structures, allowing for the patterning of electrodes that contact both the n-doped and p-doped InP layers. Flip-chip bonding techniques are employed to attach the semiconductor wafer to a stronger support substrate, which may also include electronic circuitry for electrical contact with the electrodes.
Another significant patent is focused on the method for fabricating high-sensitivity photodetectors. This application outlines methods for fabricating and packaging avalanche photodiodes (APDs) that are particularly useful for high-sensitivity Geiger-mode APDs. Similar to his previous patent, the photodetector is formed on a semiconductor wafer of indium phosphide (InP) with epitaxial layers, including indium gallium arsenide (InGaAs) as the photodetecting layer. The packaging process involves etching a well into the epitaxial structure, allowing for the patterning of electrodes that contact the n-doped and p-doped InP regions. Flip-chip bonding techniques are again utilized to attach the semiconductor wafer to a stronger support substrate.
Career Highlights
Throughout his career, Rafael has worked with notable companies such as Princeton Lightwave, Inc. and AT&T Corp. His work has significantly impacted the development of high-sensitivity photodetectors, making him a key figure