The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2024
Filed:
Aug. 24, 2023
Amplification Technologies, Corp., Linden, NJ (US);
Rafael Ben-Michael, Scotch Plains, NJ (US);
Amplification Technologies, Corp., Linden, NJ (US);
Abstract
This Application discloses methods for fabricating and packaging avalanche photodiodes (APDs), particularly useful for high sensitivity Geiger-mode APDs formed using an array of micro-cells. The photodetector is formed on a semiconductor wafer of indium phosphide (InP) having epitaxial layers, including indium gallium arsenide (InGaAs) as the photodetecting layer, with n-doped InP to one side, and layers of InP incorporating p-doped regions on the opposite side. The p-doped regions may be used to define the array of micro-cells. The photodetector is packaged by etching a well into the epitaxial structure on the semiconductor wafer, allowing an electrode to be patterned that contacts the n-doped InP layer and another that contacts the p-doped InP regions. Flip-chip bonding techniques can then attach the semiconductor wafer to a stronger support substrate, which may additionally be configured with electronic circuitry positioned to electrically contact the electrodes on the semiconductor wafer surface.