The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2010
Filed:
Mar. 19, 2008
Mark Allen Itzler, Princeton, NJ (US);
Rafael Ben-michael, Scotch Plains, NJ (US);
Mark Allen Itzler, Princeton, NJ (US);
Rafael Ben-Michael, Scotch Plains, NJ (US);
Princeton Lightwave, Inc., Cranbury, NJ (US);
Abstract
Avalanche photodiodes are provided, wherein the APDs provide both high optical coupling efficiency and low dark count rate. The APDs are formed such that their cap layer has an active region of sufficient width to enable high optical coupling efficiency but the APD still exhibits a low dark count rate. These cap layers have a device area with an active region and an edge region, wherein the size of the active region is substantially matched to the mode-field diameter of an optical beam, and wherein the size of the edge region is made small so as to reduce the number of defects included. These APD designs maintain a substantially uniform gain and breakdown voltage, as necessary for practical use.