The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 1998

Filed:

May. 01, 1996
Applicant:
Inventors:

Rafael Ben-Michael, Eatontown, NJ (US);

Uziel Koren, Fair Haven, NJ (US);

Assignee:

Lucent Technologies Inc., Murray Hill, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
216 24 ; 216-2 ; 216 41 ;
Abstract

The present invention is directed to a semiconductor waveguiding structure which includes a) a first semiconductor waveguiding layer formed on a substrate, b) a barrier layer that is formed on the first semiconductor waveguiding layer, and that is resistant to a selected etchant, and c) a second semiconductor waveguiding layer that is etched using the selected etchant such that its width is tapered along its length to a pointed edge. A separate etching of the first semiconductor layer is performed to form each sidewall of the first semiconductor layer. The intersection of those sidewalls defines the pointed edge which has a radius of curvature of less than 500 Angstroms.


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