Raees Pervaiz

Title: Raees Pervaiz: Innovator in Anisotropic Substrate Etching

Introduction

Raees Pervaiz is a notable inventor based in Hampton, NH (US). He has made significant contributions to the field of semiconductor technology, particularly in the area of substrate etching. His innovative approach has led to the development of a unique patent that enhances the efficiency of etching processes.

Latest Patents

Raees Pervaiz holds a patent for an "Apparatus and techniques for anisotropic substrate etching." This method involves generating a plasma in a plasma chamber, which contains an etchant species. The process includes extracting a pulsed ion beam from the plasma chamber and directing it towards a substrate. The pulsed ion beam consists of an ON portion and an OFF portion. During the OFF portion, the substrate is not biased with respect to the plasma chamber, and the duration of this OFF portion is less than the transit time of the etchant species from the plasma chamber to the substrate. This innovative technique has the potential to improve the precision and effectiveness of substrate etching.

Career Highlights

Raees Pervaiz is currently employed at Varian Semiconductor Equipment Associates, Inc. His work at this company has allowed him to apply his expertise in semiconductor manufacturing and etching technologies. His contributions have been instrumental in advancing the capabilities of the equipment used in the industry.

Collaborations

Throughout his career, Raees has collaborated with several talented individuals, including Glen F R Gilchrist and Kenneth L Starks. These collaborations have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Raees Pervaiz is a distinguished inventor whose work in anisotropic substrate etching has made a significant impact on semiconductor technology. His patent and contributions to Varian Semiconductor Equipment Associates, Inc. highlight his dedication to advancing the field.