The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2019
Filed:
Jun. 30, 2017
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Glen F. R. Gilchrist, Danvers, MA (US);
Raees Pervaiz, Hampton, NH (US);
Kenneth Starks, Gloucester, MA (US);
Shurong Liang, Lynnfield, MA (US);
Tyler Rockwell, Wakefield, MA (US);
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC., Gloucester, MA (US);
Abstract
A method may include generating a plasma in a plasma chamber, the plasma comprising an etchant species and extracting a pulsed ion beam from the plasma chamber and directing the pulsed ion beam to a substrate, where the pulsed ion beam comprises an ON portion and an OFF portion. During the OFF portion the substrate may not be biased with respect to the plasma chamber, and the duration of the OFF portion may be less than a transit time of the etchant species from the plasma chamber to the substrate.