Mömbris, Germany

Raban Held


Average Co-Inventor Count = 2.6

ph-index = 3

Forward Citations = 78(Granted Patents)


Location History:

  • Mombris, DE (1996)
  • Moembris, DE (1998 - 2002)
  • Mömbris, DE (2002 - 2005)

Company Filing History:


Years Active: 1996-2005

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5 patents (USPTO):Explore Patents

Title: Raban Held: Innovator in Semiconductor Technology

Introduction

Raban Held is a notable inventor based in Mömbris, Germany. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on innovative methods for producing semiconductor components, particularly those involving Schottky and pn junctions.

Latest Patents

One of Raban Held's latest patents is titled "Semiconductor component and method for producing the same." This invention describes a method for creating a semiconductor component with adjacent Schottky and pn junctions positioned in a drift area of semiconductor material. The process involves using a silicon carbide substrate doped with a first doping material and depositing a silicon carbide layer with a second doping material. The method further includes inserting a third doping material to form pn junctions and subjecting the component to a series of temperature treatments and metal coatings to establish Schottky and ohmic contacts.

Career Highlights

Throughout his career, Raban Held has worked with prominent companies in the automotive and technology sectors, including Daimler Chrysler AG and Daimler-Benz AG. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Raban Held has collaborated with notable professionals in his field, including Nando Kaminski and Wolfgang Wondrak. These collaborations have likely enriched his work and contributed to the advancements in semiconductor technology.

Conclusion

Raban Held is a distinguished inventor whose work in semiconductor technology has led to significant innovations. His patents and collaborations reflect his commitment to advancing the field and improving semiconductor components.

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