The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2005
Filed:
Sep. 09, 2002
Nando Kaminski, Suhr, CH;
Raban Held, Mömbris, DE;
Nando Kaminski, Suhr, CH;
Raban Held, Mömbris, DE;
Daimler Chrysler AG, Stuttgart, DE;
Abstract
A method for producing a semiconductor component with adjacent Schottky () and pn () junctions positions in a drift area () of a semiconductor material. According to the method, a silicon carbide substrate doped with a first doping material of at least 10cmis provided, and a silicon carbide layer with a second doping material of the same charge carrier type in the range of 10and 10cmis homo-epitaxially deposited on the substrate. A third doping material with a complimentary charge carrier is inserted, and structured with the aid of a diffusion and/or ion implantation, on the silicon carbide layer surface that is arranged far from the substrate to form pn junctions. Subsequently the component is subjected to a first temperature treatment between 1400° C. and 1700° C. Following this temperature treatment, a first metal coating is deposited on the implanted surface in order to form a Schottky contact and then a second metal coating is deposited in order to form an ohmic contact. Subsequently the first and second metal coatings are structured as designed.