Daimler Chrysler Ag

Daimler-benz Ag

Raban Held

Wolfgang Wondrak

Nando Kaminski

Horst Neubrand

Gerhard Pensl

Vera Lauer

Scott T Sheppard

Erhard Stein

A method for producing a semiconductor component with adjacent Schottky () and pn () junctions positions in a drift area () of a semiconductor material. According to the method, a silicon carbide substrate doped with a first doping material of at least 10cmis provided, and a silicon carbide layer with a second doping material of the same charge carrier type in the range of 10and 10cmis homo-epitaxially deposited on the substrate. A third doping material with a complimentary charge carrier is inserted, and structured with the aid of a diffusion and/or ion implantation, on the silicon carbide layer surface that is arranged far from the substrate to form pn junctions. Subsequently the component is subjected to a first temperature treatment between 1400&#xb0; C. and 1700&#xb0; C. Following this temperature treatment, a first metal coating is deposited on the implanted surface in order to form a Schottky contact and then a second metal coating is deposited in order to form an ohmic contact. Subsequently the first and second metal coatings are structured as designed.

Semiconductor component and method for producing the same

The invention relates to a semiconductor component with adjacent Schottky ( ) and pn ( ) junctions positioned in a drift area ( ) of a semiconductor material. The invention also relates to a method for producing said semiconductor component.

A semiconductor component having impurity atoms introduced by implantation which are subsequently electrically activated by way of an annealing process. Immediately after the annealing process, the component has a mean surface roughness of less than 15 nm and at least 10% of the implanted impurity atoms are electrically activated.

Semiconductor component with foreign atoms introduced by ion implantation and process for producing the same

Semiconductor component with embedded fixed charges to provide increased

Semiconductor structure having one or more lateral, high-blocking

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Mömbris, Germany

Raban Held