R Scott Kern

Title: R Scott Kern: Innovator in III-Nitride Light Emitting Devices

Introduction

R Scott Kern is a prominent inventor based in San Jose, CA, recognized for his significant contributions to the field of light-emitting devices. With a remarkable portfolio of 13 patents, Kern's work has advanced the technology surrounding III-nitride materials, particularly in optimizing their application in lighting systems.

Latest Patents

One of Kern's latest patents focuses on the "Formation of Ohmic Contacts in III-Nitride Light Emitting Devices." This patent outlines several embodiments for optimizing p-type layers of GaN-based light-emitting devices to ensure effective Ohmic contact with metal. The first embodiment describes a p-type GaN transition layer that achieves a resistivity of greater than or equal to about 7 Ω cm. Additionally, Kern explores variations, including the use of any III-V semiconductor as a p-type transition layer, a superlattice configuration, and a single p-type layer with varying composition and dopant concentration.

Career Highlights

Throughout his career, R Scott Kern has held significant positions at renowned companies such as Lumileds Lighting U.S., LLC and Agilent Technologies, Inc. His expertise in materials science and engineering has solidified his reputation as a leading inventor in the industry.

Collaborations

Kern has collaborated with notable colleagues, including Werner K. Goetz and Michael David Camras. These partnerships highlight the collaborative spirit within the research community, allowing for the exchange of ideas and the advancement of innovative technologies.

Conclusion

R Scott Kern's invention and innovative work in the field of III-nitride light emitting devices underline his importance as an inventor. His continued contributions will likely influence future developments in lighting technology, benefiting both the industry and consumers alike.