The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2000
Filed:
Apr. 17, 1998
Shih-Yuan Wang, Palo Alto, CA (US);
Yong Chen, Mountain View, CA (US);
Scott W Corzine, Sunnyvale, CA (US);
R Scott Kern, San Jose, CA (US);
Carrie C Coman, Milpitas, CA (US);
Michael R Krames, Mountain View, CA (US);
Frederick A Kish, Jr, San Jose, CA (US);
Yawara Kaneko, Kanagawa, JP;
Hewlett-Packard Company, Palo Alto, CA (US);
Abstract
A buried reflector 50 in an epitaxial lateral growth layer forms a part of a light emitting device and allows for the fabrication of a semiconductor material that is substantially low in dislocation density. The laterally grown material is low in dislocation defect density where it is grown over the buried reflector making it suitable for high quality optical light emitting devices, and the embedded reflector eliminates the need for developing an additional reflector.