Lumileds Lighting U.s., LLC

Hewlett-packard Company

Agilent Technologies, Inc.

Philips Lumileds Lighting Company LLC

Lumileds Holding B.v.

R Scott Kern

Werner K Goetz

Michael David Camras

Chihping Kuo

Changhua Chen

Michael Ragan Krames

Paul Scott Martin

Fred A Kish, Jr

Daniel Alexander Steigerwald

Carrie Carter Coman

Gina L Christenson

Shih-Yuan Wang

Yong Qin Chen

Scott W Corzine

Nathan Fredrick Gardner

Stephen Andrew Stockman

Arto V Nurmikko

Andrew Y Kim

Yoon-Kyu Song

Richard P Schneider

Yawara Kaneko

Xiaoping Chen, Legal Representative

Carrie C Coman

Frederick A Kish, Jr

P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 &#x3a9; cm is formed between a p-type conductivity layer and a metal contact. In a second embodiment, the p-type transition layer is any III-V semiconductor. In a third embodiment, the p-type transition layer is a superlattice. In a fourth embodiment, a single p-type layer of varying composition and varying concentration of dopant is formed.

Formation of Ohmic contacts in III-nitride light emitting devices

P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 &#x3a9;cm is formed between a p-type conductivity layer and a metal contact. In a second embodiment, the p-type transition layer is any III-V semiconductor. In a third embodiment, the p-type transition layer is a superlattice. In a fourth embodiment, a single p-type layer of varying composition and varying concentration of dopant is formed.

P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 &OHgr;cm is formed between a p-type conductivity layer and a metal contact. In a second embodiment, the p-type transition layer is any III-V semiconductor. In a third embodiment, the p-type transition layer is a superlattice. In a fourth embodiment, a single p-type layer of varying composition and varying concentration of dopant is formed.

Formation of ohmic contacts in III-nitride light emitting devices

A smoothing structure containing indium is formed between the substrate and the active region of a III-nitride light emitting device to improve the surface characteristics of the device layers. In some embodiments, the smoothing structure is a single layer, separated from the active region by a spacer layer which typically does not contain indium. The smoothing layer contains a composition of indium lower than the active region, and is typically deposited at a higher temperature than the active region. The spacer layer is typically deposited while reducing the temperature in the reactor from the smoothing layer deposition temperature to the active region deposition temperature. In other embodiments, a graded smoothing region is used to improve the surface characteristics. The smoothing region may have a graded composition, graded dopant concentration, or both.

Indium gallium nitride smoothing structures for III-nitride devices

An epitaxial material grown laterally in a trench allows for the fabrication of a trench-based semiconductor material that is substantially low in dislocation density. Initiating the growth from a sidewall of a trench minimizes the density of dislocations present in the lattice growth template, which minimizes the dislocation density in the regrown material. Also, by allowing the regrowth to fill and overflow the trench, the low dislocation density material can cover the entire surface of the substrate upon which the low dislocation density material is grown. Furthermore, with successive iterations of the trench growth procedure, higher quality material can be obtained. Devices that require a stable, high quality epitaxial material can then be fabricated from the low dislocation density material.

Epitaxial material grown laterally within a trench and method for producing same

A semiconductor device is provided having n-type device layers of III-V nitride having donor dopants such as germanium (Ge), silicon (Si), tin (Sn), and/or oxygen (O) and/or p-type device layers of III-V nitride having acceptor dopants such as magnesium (Mg), beryllium (Be), zinc (Zn), and/or cadmium (Cd), either simultaneously or in a doping superlattice, to engineer strain, improve conductivity, and provide longer wavelength light emission.

Semiconductor devices with selectively doped III-V nitride layers

Light emitting devices having a vertical optical path, e.g. a vertical cavity surface emitting laser or a resonant cavity light emitting or detecting device, having high quality mirrors may be achieved using wafer bonding or metallic soldering techniques. The light emitting region interposes one or two reflector stacks containing dielectric distributed Bragg reflectors (DBRs). The dielectric DBRs may be deposited or attached to the light emitting device. A host substrate of GaP, GaAs, InP, or Si is attached to one of the dielectric DBRs. Electrical contacts are added to the light emitting device.

Methods for fabricating light emitting devices having aluminum gallium indium nitride structures and mirror stacks

Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks

Thickness tailoring of wafer bonded AlxGayInzN structures by laser melting

In the present invention, an interfacial layer is added to a light-emitting diode or laser diode structure to perform the role of strain engineering and impurity gettering. A layer of GaN or Al,In,Ga,N (0&lE;x&lE;1, 0&lE;y&lE;1) doped with Mg, Zn, Cd can be used for this layer. Alternatively, when using Al,In,Ga,N (x>0), the layer may be undoped. The interfacial layer is deposited directly on top of the buffer layer prior to the growth of the n-type (GaN:Si) layer and the remainder of the device structure. The thickness of the interface layer varies from 0.01-10.0 &mgr;m.

Method of strain engineering and impurity control in III-V nitride semiconductor films and optoelectronic devices

In the present invention, an interfacial layer is added to a light-emitting diode or laser diode structure to perform the role of strain engineering and impurity gettering. A layer of GaN or Al,In,Gal,N (0&lE;x&lE;1, 0&lE;y&lE;1) doped with Mg, Zn, Cd can be used for this layer. Alternatively, when using Al,In,Ga,N (x>0), the layer may be undoped. The interfacial layer is deposited directly on top of the buffer layer prior to the growth of the n-type (GaN:Si) layer and the remainder of the device structure. The thickness of the interfacial layer varies from 0.01-10.0 &mgr;m.

Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices

A buried reflector 50 in an epitaxial lateral growth layer forms a part of a light emitting device and allows for the fabrication of a semiconductor material that is substantially low in dislocation density. The laterally grown material is low in dislocation defect density where it is grown over the buried reflector making it suitable for high quality optical light emitting devices, and the embedded reflector eliminates the need for developing an additional reflector.

Buried reflectors for light emitters in epitaxial material and method

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San Jose, CA, United States of America

R Scott Kern