Quan H Ngo

Title: **Innovative Contributions of Quan H. Ngo in Memory Storage Technologies**

Introduction

Quan H. Ngo, an accomplished inventor based in Sacramento, CA, has made significant strides in the field of memory storage technologies. With four granted patents to his name, his expertise and innovative thinking have contributed to advancements in data processing and memory cell testing.

Latest Patents

One of Quan H. Ngo's latest patents focuses on a "High Bandwidth Datapath Load and Test of Multi-Level Memory Cells". This invention presents an apparatus and technique specifically designed for testing multi-level cells (MLC) in memory storage devices. Utilizing a high bandwidth data path architecture, the technique entails hardware that retrieves first and second data from the multilevel cell memory. The primary innovation lies in the comparison of these two distinct datasets, which informs the programming of the multilevel cell memory. This process involves accessing memory cells and determining how many bits per memory cell require programming based on the initial data comparison.

Career Highlights

Quan H. Ngo is affiliated with Intel Corporation, where his inventive work continues to shape the evolution of storage devices. His contributions not only enhance memory cell efficiency but also pioneer methods that improve testing processes within the industry.

Collaborations

Throughout his career, Quan has collaborated with notable colleagues such as Daniel R. Elmhurst and Karthikeyan Ramamurthi. These partnerships have fostered a creative environment where innovative ideas can thrive, leading to impactful solutions in memory technology.

Conclusion

In summary, Quan H. Ngo exemplifies the spirit of innovation within the tech industry. His recent patent contributions to memory storage technology solidify his role as a leading inventor, driving advancements at Intel Corporation and beyond. As memory technologies continue to evolve, the impact of Ngo's work will undoubtedly be felt for years to come.