Qingyi Huang

Title: Qingyi Huang: Semiconductor and Stacked-Layer Innovations

Introduction

Qingyi Huang is an inventor based in Wuhan, China, whose patent work focuses on semiconductor devices and structures. Huang is associated with Yangtze Memory Technologies Co., Ltd. The supplied information lists 2 patents.

Latest Patents

Huang’s listed patents address semiconductor device design and stacked-layer structures.

“Semiconductor Device and Method of Forming Thereof” describes a semiconductor device with a body structure and an outer-edge structure around the body’s bottom perimeter. Its side surface is shaped so that the lateral distance from the outer-edge structure gradually decreases from the top surface toward the bottom surface. The patent also describes a method for preparing the device.

“Stacked Layers with Filling Structures” describes a semiconductor structure made of first and second stacked layers. It defines two regions within the stack, with coplanar surfaces, and places a filling structure on a surface of the surrounding region.

Career Highlights

The two listed inventions concern semiconductor fabrication and structural design. Together, they address device geometry and the arrangement of stacked layers and filling structures.

Collaborations

The supplied information names Lina Miao and Zhen Pan as Huang’s coworkers. It does not specify their roles in the listed patents or describe particular collaborations.

Conclusion

Qingyi Huang’s listed patent work at Yangtze Memory Technologies Co., Ltd. centers on semiconductor devices and stacked-layer structures, reflecting contributions to the design and fabrication of semiconductor technologies.