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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12685057 B1

PDFFull Text
Date of Patent:
Jul. 14, 2026

Filed:

Jul. 17, 2023

Semiconductor device and method of forming thereof

Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Qingyi Huang, Wuhan, CN;

Lina Miao, Wuhan, CN;

Assignee:

YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;

Attorney:

BAYES PLLC

Primary Examiner:

Thao P Le

Int. Cl.
CPC ...
H01L 23/00 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01); H10B 80/00 (2023.01); H10P 50/00 (2026.01); H10P 52/00 (2026.01); H10W 78/00 (2026.01); H10W 90/00 (2026.01); H10W 90/20 (2026.01);
U.S. Cl.
CPC ...
H10P 52/00 (2026.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02); H10B 80/00 (2023.02); H10P 50/73 (2026.01); H10W 78/00 (2026.01); H10W 90/00 (2026.01); H10W 90/20 (2026.01); H10W 90/732 (2026.01);
Abstract

The present disclosure provides a semiconductor device and a preparation method thereof. The semiconductor device includes a body structure and an outer edge structure at a periphery of a bottom of the body structure. The body structure includes a top surface and a bottom surface arranged opposite to each other, and a side surface between the top surface and the outer edge structure. The side surface includes a first side surface connected with the outer edge structure, and a lateral distance of the first side surface relative to the outer edge structure gradually decreases along a direction from the top surface to the bottom surface.

Find Patent Forward Citations

Huang, Qingyi. (2026). Semiconductor device and method of forming thereof (U.S. Patent No. 12685057). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12685057

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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