Juelich, Germany

Qing-Tai Zhao

This inventor holds 3 USPTO granted patents and 3 published patent applications and 3 EPO patents. Top assignees: Forschungszentrum Julich Gmbh, Forschungszentrum Juelich Gmbh. Active years: 2003-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Qing-Tai Zhao. Retrieved from https://idiyas.com/inventor/qing-tai-zhao

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 3 

% Patents Active = 33.3

 

Average Co-Inventor Count = 2.8

ph-index = 1

Forward Citations = 7(Granted Patents)


Location History:

  • Jülich, DE (2003 - 2009)
  • Juelich, DE (2018)

Company Filing History:


Years Active: 2003-2018

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3 patents (USPTO):Explore Patents

Title: Innovations of Qing-Tai Zhao

Introduction

Qing-Tai Zhao is a notable inventor based in Jülich, Germany. He has made significant contributions to the field of electronics, particularly in the development of advanced transistor technologies. With a total of 3 patents to his name, Zhao's work has garnered attention in both academic and industrial circles.

Latest Patents

One of Zhao's latest patents is for a tunnel field-effect transistor and the method for producing it. This invention outlines a process for creating a tunnel field-effect transistor (TFET) that includes a source region, a channel region, and a drain region. The method involves arranging an epitaxial layer on a silicon substrate and applying a gate arrangement with a gate electrode. A gate dielectric is positioned between the gate electrode and the silicon substrate. The process also includes forming a doped pocket region adjacent to the source region and creating a selectively silicidated region in the source region. This innovation aims to achieve a tunnel junction parallel to the electric field lines of the gate electrode.

Another significant patent by Zhao relates to a method for producing a contact and electronic component that includes passivated defining surfaces between layers. This method utilizes passivating elements such as sulfur, selenium, and tellurium during the production process. The invention allows for the reduction of Schottky barriers and the adjustment of output work at the transition, leading to the development of components like Schottky barrier MOSFETs.

Career Highlights

Qing-Tai Zhao has worked with prominent research institutions, including Forschungszentrum Jülich GmbH. His work in these organizations has contributed to advancements in semiconductor technology and electronic components.

Collaborations

Zhao has collaborated with notable colleagues such as Siegfried Mantl and Sebastian Blaeser. These partnerships have further enhanced the impact of his research and innovations in the field.

Conclusion

Qing-Tai Zhao's contributions to electronics, particularly through his patents and collaborations, highlight his role as a significant inventor in the industry. His work continues to influence the development of advanced electronic components and technologies.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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