The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2009

Filed:

Jun. 19, 2004
Applicants:

Siegfried Mantl, Jülich, DE;

Qing-tai Zhao, Jülich, DE;

Inventors:

Siegfried Mantl, Jülich, DE;

Qing-Tai Zhao, Jülich, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/22 (2006.01); H01L 31/0288 (2006.01); H01L 21/38 (2006.01);
U.S. Cl.
CPC ...
Abstract

The invention relates to a method for the production of passivated defining surfaces () between a first layer, such as a silicide (), and an adjacent layer. Passivating elements, such as S, Se and Te are used in said layer structure during said method and the first layer is enriched on the adjacent layer during heat treatment on at least one defining surface. Schottky barriers can be reduced and output work of the transition can be adjusted. Components, e.g. Schottky barrier MOSFETs with small or negative Schottky barriers arc disclosed as source and/or drain contacts and spin transistors.


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