Shanghai, China

Qiao Yang

This inventor holds 3 USPTO granted patents. Top assignee: Globalfoundries U.S. Inc.. Active years: 2021-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Qiao Yang. Retrieved from https://idiyas.com/inventor/qiao-yang-b2m19jck

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.4

ph-index = 1


Company Filing History:


Years Active: 2021-2025

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3 patents (USPTO):Explore Patents

Title: Innovations of Qiao Yang in Semiconductor Technology

Introduction

Qiao Yang is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of memory circuits and voltage-controlled oscillators. With a total of 3 patents to his name, Qiao Yang continues to push the boundaries of innovation in his field.

Latest Patents

One of Qiao Yang's latest patents is a static random access memory (SRAM) cell with variable toggle threshold voltage. This SRAM cell includes P-type and N-type transistors that have secondary gates. A node connected to all secondary gates receives a write enable signal (WEN). A low WEN forward biases the P-type transistors and increases the toggle threshold voltage (Vtth) of the SRAM cell to avoid data switching during a read. Conversely, a high WEN forward biases the N-type transistors and decreases Vtth during a write. This SRAM cell can be implemented using fully depleted semiconductor-on-insulator technology, allowing for an array of SRAM cells to be positioned above a single well region.

Another notable patent is a voltage-controlled oscillator (VCO) with a tunable tail harmonic filter. This VCO includes an inductor-capacitor (LC) resonant circuit, which features varactors that receive a variable input voltage. The cross-coupled transistors connected to the LC resonant circuit have back gates that receive a variable back gate bias voltage (Vbg). This design ensures that an optimal relationship between the oscillating frequency of the LC resonant circuit and the resonant frequency of the LC filter is continuously maintained, minimizing phase noise.

Career Highlights

Qiao Yang is currently employed at GlobalFoundries U.S. Inc., where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the capabilities of memory circuits and oscillators, contributing to the overall progress in the industry.

Collaborations

Qiao Yang collaborates with talented individuals such as Chi Zhang and Thomas Gregory Mckay. These partnerships enhance the innovative environment in which he works, fostering creativity and technological advancement.

Conclusion

Qiao Yang's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the field. His work continues to influence advancements in memory circuits and oscillators, showcasing the importance of

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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