Qiang Si

Title: Qiang Si: Innovator in Memory Device Technology

Introduction

Qiang Si is a prominent inventor based in Beijing, China. He has made significant contributions to the field of memory devices, holding a total of 8 patents. His innovative work has advanced the technology used in memory control units and data processing systems.

Latest Patents

One of Qiang Si's latest patents is titled "Memory device having hardware regulation training." This invention includes a memory control unit and a write output clock device. The memory control unit provides a write input clock and a first control value. The write output clock device produces multiple internal clocks based on the write input clock, selecting a target internal clock and delaying it to create a write output clock for a memory unit. The memory unit then generates a data signal based on this clock. The memory control unit also ensures that the write output clock meets the time-sequence requirements of the memory unit, adjusting the control value or the selected internal clock as necessary.

Another notable patent is the "Processing system and method for data strobe signal." This invention involves a counter circuit that counts the falling edges of the data strobe signal (DQS) within a valid region, generating several counting signals. An OR logic circuit processes these signals along with a DQS window start signal to create a DQS window signal. A filter circuit gates the DQS according to this window signal, maintaining the DQS window start signal until at least one counting signal changes.

Career Highlights

Qiang Si has worked with several notable companies, including Via Alliance Semiconductor Co., Ltd. and Shanghai Zhaoxin Semiconductor Co., Ltd. His experience in these organizations has contributed to his expertise in semiconductor technology and memory devices.

Collaborations

Throughout his career, Qiang Si has collaborated with talented individuals such as Fan Jiang and Chen Chen. These partnerships have fostered innovation and development in his projects.

Conclusion

Qiang Si's contributions to memory device technology and his impressive portfolio of patents highlight his role as a leading inventor in the field. His work continues to influence advancements in memory control and data processing systems.