Wuhan, China

Qian Li

This inventor holds 1 USPTO granted patent and 5 published patent applications. Top assignee: Yangtze Memory Technologies., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Qian Li. Retrieved from https://idiyas.com/inventor/qian-li-ejmak5d1

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Qian Li: Innovator in Semiconductor Technology

Introduction: Qian Li is a prominent inventor based in Wuhan, China. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique patent that enhances the functionality of semiconductor devices.

Latest Patents: Qian Li holds a patent for a "Seal ring structure in a semiconductor device and methods for forming the same." This patent describes a semiconductor device that includes a first semiconductor layer and a first semiconductor structure formed on it. The structure features a main chip region and seal ring discontinuous contact structures that enclose the main chip region. Each of these structures includes a seal ring body portion and a through silicon contact (TSC) portion that penetrates through the first semiconductor layer, ensuring effective coupling.

Career Highlights: Qian Li is currently employed at Yangtze Memory Technologies, Ltd., where he continues to push the boundaries of semiconductor innovation. His work has been instrumental in advancing the technology used in modern electronic devices.

Collaborations: Qian Li collaborates with talented coworkers, including Shu Wu and Liang Xiao, who contribute to the innovative environment at Yangtze Memory Technologies, Ltd.

Conclusion: Qian Li's contributions to semiconductor technology exemplify the spirit of innovation. His patent and ongoing work at Yangtze Memory Technologies, Ltd. highlight his role as a key player in the advancement of this critical field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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