The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2026

Filed:

Mar. 08, 2022
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Qian Li, Wuhan, CN;

Shu Wu, Wuhan, CN;

Liang Xiao, Wuhan, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01); H01L 21/50 (2006.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/585 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 21/50 (2013.01); H01L 25/50 (2013.01);
Abstract

In certain aspects, a semiconductor device includes a first semiconductor layer, a first semiconductor structure formed on the first semiconductor layer including a main chip region, and seal ring discontinuous contact structures formed in a seal ring region enclosing the main chip region. Each seal ring discontinuous contact structure includes a seal ring body portion and a through silicon contact (TSC) portion penetrating through the first semiconductor layer and coupled to the seal ring body portion.


Find Patent Forward Citations

Li, Qian. (2026). Seal ring structure in a semiconductor device and methods for forming the same (U.S. Patent No. 12616028). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12616028

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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