Qi Xie

Title: Qi Xie - Innovator in Material Deposition Technologies

Introduction

Qi Xie is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of material deposition technologies, holding a total of 2 patents. His work focuses on innovative methods that enhance the efficiency and effectiveness of material application on various substrates.

Latest Patents

Qi Xie's latest patents include a novel deposition method that allows for the selective application of materials on substrates with differing surfaces. This method involves supplying a bulk precursor that contains metal atoms, halogen atoms, and at least one additional atom that is neither a metal nor a halogen. The process ensures that more material is deposited on the first surface compared to the second surface. Additionally, he has developed methods and systems for forming layers that comprise a transition metal and a group 13 element. These layers are crucial for applications in advanced electronic structures such as field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

Career Highlights

Qi Xie is currently associated with Asm IP Holding B.V., where he continues to push the boundaries of material science. His innovative approaches have positioned him as a key player in the development of next-generation electronic components.

Collaborations

Throughout his career, Qi has collaborated with notable professionals in the field, including Maart Van Druenen and Charles Dezelah. These partnerships have fostered a collaborative environment that enhances the innovation process.

Conclusion

In summary, Qi Xie is a distinguished inventor whose work in material deposition technologies is paving the way for advancements in electronic applications. His contributions are vital to the ongoing evolution of the industry.