Asm IP Holding B.v.

Qi Xie

Chiyu Zhu

Charles Dezelah

Ren-Jie Chang

Henri Jussila

Petro Deminskyi

Lifu Chen

Maart Van Druenen

Giuseppe Alessio Verni

A method of selectively depositing a material on a substrate with a first and second surface, the first surface being different than the second surface. The depositing of the material on the substrate comprises: supplying a bulk precursor comprising metal atoms, halogen atoms and at least one additional atom not being a metal or halogen atom to the substrate; and supplying a reactant to the substrate. The bulk precursor and the reactant have a reaction with the first surface relative to the second surface to form more material on the first surface than on the second surface.

Deposition method

Disclosed are methods and systems for depositing layers comprising a transition metal and a group 13 element. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

Methods and systems for forming a layer comprising a transitional metal and a group 13 element

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Shanghai, China

Qi Xie