Preston Smith

Title: The Innovations of Preston Smith

Introduction

Preston Smith is a notable inventor based in Portland, OR (US). He has made significant contributions to the field of semiconductor fabrication, holding a total of 3 patents. His work primarily focuses on enhancing the efficiency and effectiveness of semiconductor processes.

Latest Patents

One of Preston Smith's latest patents is titled "In-situ silicon nitride and silicon based oxide deposition with graded interface for damascene application." This invention discloses a structure that enables damascene copper semiconductor fabrication. The design includes a silicon nitride film that provides a diffusion barrier for copper, as well as an etch stop for the dual damascene process. Above the silicon nitride film, there is a silicon oxynitride film that is graded to create a gradual change in the composition of nitrogen and oxygen within the film. Directly above this is a silicon oxide layer, which serves as an insulator for metal lines. The entire film stack of silicon nitride, silicon oxynitride, and silicon oxide is formed sequentially within the same plasma-processing chamber by modifying the composition of film-forming gases.

Career Highlights

Preston Smith is currently employed at Intel Corporation, where he continues to innovate in the semiconductor industry. His work has been instrumental in advancing technologies that are critical for modern electronics.

Collaborations

Preston collaborates with Chi-hing Choi, a fellow innovator at Intel Corporation. Their combined expertise contributes to the development of cutting-edge semiconductor technologies.

Conclusion

Preston Smith's contributions to semiconductor fabrication through his innovative patents highlight his role as a key inventor in the industry. His work not only enhances the efficiency of semiconductor processes but also paves the way for future advancements in technology.