The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2003
Filed:
Mar. 09, 2001
Preston Smith, Portland, OR (US);
Chi-hing Choi, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A structure to enable damascene copper semiconductor fabrication is disclosed. There is a silicon nitride film for providing a diffusion barrier for Cu as well as an etch stop for the duel damascene process. Directly above the silicon nitride film is a silicon oxynitride film. The silicon oxynitride film is graded, to form a gradual change in composition of nitrogen and oxygen within the film. Directly above the silicon oxynitride film is silicon oxide. The silicon oxide serves as an insulator for metal lines. Preferably, the film stack of silicon nitride, silicon oxynitride and silicon oxide is all formed in sequence, within the same plasma-processing chamber, by modifying the composition of film-forming gases for forming each film.