Hsinchu, Taiwan

Po-Shao Lin

USPTO Granted Patents = 4 

Average Co-Inventor Count = 3.9

ph-index = 1

Forward Citations = 1(Granted Patents)


Location History:

  • Hsinchu, TW (2024)
  • Taipei, TW (2024)

Company Filing History:


Years Active: 2024-2025

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4 patents (USPTO):

Title: The Innovative Contributions of Po-Shao Lin

Introduction

Po-Shao Lin, an esteemed inventor based in Hsinchu, Taiwan, has made significant contributions to the field of semiconductor technology. With a remarkable portfolio consisting of four patents, Lin is recognized for his innovative approaches to semiconductor device structures and fabrication methods. His work has greatly influenced the development of advanced semiconductor devices, which are fundamental to modern electronics.

Latest Patents

Lin's latest patents showcase his expertise and creativity in semiconductor device design. One notable patent is focused on a novel semiconductor device structure and method for forming the same. This invention details a semiconductor device structure that includes a first fin structure, which comprises multiple first nanostructures stacked vertically over a substrate. Additionally, the design incorporates a second fin structure with second nanostructures, along with a dummy fin structure positioned between the two fin structures. This innovative arrangement optimizes the performance and efficiency of the semiconductor device.

Another significant patent from Lin describes semiconductor devices and methods of manufacture. This patent outlines a systematic method for patterning fins in a multilayer stack and establishing an opening in a fin that extends into the substrate. The approach involves epitaxially growing a first semiconductor material to form source/drain structures, followed by a second semiconductor material that includes a higher concentration of germanium, enhancing the device's capabilities. The precise engineering of these semiconductor structures is crucial for advancing electronic performance.

Career Highlights

Po-Shao Lin's career is marked by his pivotal role at Taiwan Semiconductor Manufacturing Company Ltd. (TSMC), where he has contributed to groundbreaking advancements in the semiconductor industry. His work has provided substantial improvements in device structures and manufacturing methods, establishing him as a key player in the field.

Collaborations

Throughout his career, Lin has collaborated with notable colleagues such as Wei-Yang Lee and Yen-Ting Chen. These partnerships have fostered a dynamic environment for innovation, allowing for the exchange of ideas and the sharing of expertise in semiconductor technology, which has undoubtedly enhanced the depth of their research outcomes.

Conclusion

In conclusion, Po-Shao Lin is a prominent inventor whose contributions to semiconductor technology are marked by both innovation and practical application. His latest patents highlight significant advancements in semiconductor device structures and manufacturing, reinforcing his reputation in the field. With ongoing collaborations and a commitment to innovation, Lin's work continues to shape the future of electronics and semiconductor technology.

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