The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2025
Filed:
Mar. 02, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Po-Shao Lin, Taipei, TW;
Yi-Hsiu Liu, Taipei, TW;
Chih-Chung Chang, Mingjian Township, Nantou County, TW;
Chung-Ting Ko, Taipei, TW;
Sung-En Lin, Hsinchu County, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A method for forming a semiconductor device structure is provided. The semiconductor device structure includes a first fin structure formed over a substrate, and the first fin structure includes a plurality of first nanostructures stacked in a vertical direction. The semiconductor device structure further includes a second fin structure formed over the substrate, and the second fin structure includes a plurality of second nanostructures stacked in a vertical direction. The semiconductor device structure further includes a dummy fin structure between the first fin structure and the second fin structure. The dummy fin structure includes a first etching stop layer between a bottom portion and a top portion.