This inventor holds 1 USPTO granted patent. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: PO-Lin Peng and Semiconductor ESD Protection
Introduction
PO-Lin Peng is an inventor associated with Taoyuan City, Taiwan. His work includes a patented semiconductor-device design that provides multiple electrostatic discharge (ESD) paths to help protect an input/output pad.
Latest Patents
Peng is credited with 1 patent: “Semiconductor Device Having Multiple Electrostatic Discharge (ESD) Paths.” The invention describes doped regions and wells arranged to form an ESD path between an input/output pad and a voltage terminal. Its design uses diode structures and semiconductor regions to provide a route for discharging electrostatic energy.
Career Highlights
Peng is associated with Taiwan Semiconductor Manufacturing Co., Ltd. The available information identifies his contribution to semiconductor-device design, particularly ESD protection, but does not provide further details about his role or career history.
Collaborations
The supplied information lists Li-Wei Chu and Ming-Fu Tsai as Peng’s coworkers. It does not specify their roles in the patent or describe any direct collaboration.
Conclusion
PO-Lin Peng’s recorded patent focuses on multiple ESD paths in a semiconductor device, reflecting an engineering contribution to protecting input/output circuitry.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile