Taichung, Taiwan

PO-Hsiung Chen

This inventor holds 1 USPTO granted patent. Top assignees: National Tsing Hua University, Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: PO-Hsiung Chen. Retrieved from https://idiyas.com/inventor/po-hsiung-chen-gdo3d5wd

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: The Innovations of PO-Hsiung Chen

Introduction

PO-Hsiung Chen is a notable inventor based in Taichung, Taiwan. He has made significant contributions to the field of semiconductor manufacturing. His work primarily focuses on photoresist technology and its applications in extreme ultraviolet lithography.

Latest Patents

PO-Hsiung Chen holds a patent for a method of manufacturing a semiconductor device. This patent involves forming a photoresist layer over a substrate, selectively exposing the photoresist layer to EUV radiation, and developing the selectively exposed photoresist layer. The photoresist layer comprises a composition that includes a solvent and a photo-active compound. This compound is a molecular cluster incorporating hexameric tin and two chloro ligands. He has 1 patent to his name.

Career Highlights

Throughout his career, PO-Hsiung Chen has worked with prominent organizations such as Taiwan Semiconductor Manufacturing Company Ltd. and Tsinghua University. His experience in these institutions has allowed him to advance his research and contribute to the semiconductor industry.

Collaborations

Some of his notable coworkers include Jui-Hsiung Liu and PO-Hsuan Lee. Their collaborative efforts have further enhanced the innovations in semiconductor technology.

Conclusion

PO-Hsiung Chen's contributions to semiconductor manufacturing and photoresist technology highlight his importance in the field. His innovative methods and collaborations continue to influence advancements in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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