The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 06, 2026

Filed:

Feb. 11, 2022
Applicants:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

National Tsing Hua University, Hsinchu, TW;

Inventors:

Jui-Hsiung Liu, Taipei, TW;

PO-Hsuan Lee, Tainan, TW;

An-Yun Lu, Taoyuan, TW;

Kuang-Ting Chen, Taipei, TW;

PO-Hsiung Chen, Taichung, TW;

Burn Jeng Lin, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/004 (2006.01); G03F 7/00 (2006.01); G03F 7/20 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0042 (2013.01); G03F 7/2004 (2013.01); G03F 7/70033 (2013.01); G03F 7/702 (2013.01); H01L 21/0274 (2013.01);
Abstract

A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate, selectively exposing the photoresist layer to an EUV radiation, and developing the selectively exposed photoresist layer. The photoresist layer has a composition including a solvent and a photo-active compound dissolved in the solvent and composed of a molecular cluster compound incorporating hexameric tin and two chloro ligands.


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