Company Filing History:
Years Active: 2023-2024
Title: Inventor Profile: Ping Wei Huang
Introduction
Ping Wei Huang is an accomplished inventor based in Pingtung County, Taiwan. He has made significant contributions to the field of semiconductor technology. His innovative work focuses on developing advanced structures for field effect transistors, which are pivotal in the electronics industry.
Latest Patents
Huang holds a patent for a unique "Fin Structure for Fin Field Effect Transistor and Method for Fabrication the Same". This invention provides a novel fin structure for a fin field effect transistor, which consists of a substrate featuring multiple silicon fins. Each silicon fin possesses a round-like shape at the top in a cross-section view. The design includes an isolation layer positioned on the substrate at the lower section of the silicon fins, while the upper section remains exposed. Additionally, a stress buffer layer, which includes a nitride portion, is located on the sidewall of the silicon fins between the isolation layer and the lower section, enhancing the device's performance.
Career Highlights
Ping Wei Huang currently works at United Microelectronics Corporation, where he continues to drive innovation in semiconductor technology. His expertise and dedication have made him a valuable asset in the advancement of transistor design and production methodologies.
Collaborations
Throughout his career, Huang has collaborated with talented individuals, including coworkers Hao Che Feng and Hung Jen Huang. Their teamwork has fostered an environment of creativity and innovation, leading to significant advancements in the semiconductor field.
Conclusion
Ping Wei Huang's contributions to the realm of field effect transistors and his patented inventions reflect his status as a prominent inventor in the industry. With a focus on improving the efficiency and functionality of semiconductor devices, Huang is poised to continue his impactful work at United Microelectronics Corporation. His innovations are essential for the future development of electronic technologies.