Rueil Malmaison, France

Pierre Briere

This inventor holds 3 USPTO granted patents. Top assignee: Thomson-Csf. Active years: 1985-1992.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Pierre Briere. Retrieved from https://idiyas.com/inventor/pierre-briere

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.4

ph-index = 2

Forward Citations = 20(Granted Patents)


Location History:

  • Paris, FR (1985)
  • Rueil Malmaison, FR (1986 - 1992)

Company Filing History:


Years Active: 1985-1992

Loading Chart...
3 patents (USPTO):Explore Patents

Title: Pierre Briere: Innovator in Semiconductor Technology

Introduction

Pierre Briere is a notable inventor based in Rueil Malmaison, France. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on the development of advanced transistors and manufacturing processes that enhance the performance of electronic devices.

Latest Patents

One of Pierre Briere's latest patents is a transistor made of 3-5 group semiconductor materials on silicon. This invention involves a silicon substrate, at least one layer of semi-insulating 3-5 material, and several doped layers of 3-5 group semiconductor material. The design includes a conducting channel equipped with gate metallization, with source and drain regions that are electrically and thermally connected to the silicon substrate. Additionally, the transistor features a buffer layer of intrinsic silicon, which improves its performance.

Another significant patent is the process of manufacturing a high-frequency vertical junction field-effect transistor. This process involves implanting P.sup.+ type parallel bars in an N type silicon substrate, followed by oxidation and the deposition of a uniform layer of polycrystalline silicon. This innovative method allows for the creation of miniaturized vertical junction field-effect transistor structures through a simplified process.

Career Highlights

Pierre Briere has had a distinguished career at Thomson-CSF, where he has been instrumental in advancing semiconductor technologies. His expertise in the field has led to the development of innovative solutions that have had a lasting impact on the industry.

Collaborations

Throughout his career, Pierre has collaborated with notable colleagues such as Alain Bosella and Marie-Noelle Charasse. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Pierre Briere's contributions to semiconductor technology through his patents and work at Thomson-CSF highlight his role as a leading inventor in the field. His innovative approaches continue to influence the development of advanced electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…