The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 1992
Filed:
Dec. 05, 1990
Jean-Pierre Hirtz, L'Haye les Roses, FR;
Marie-Noelle Charasse, Paris, FR;
Thierry Pacou, Les Ulis, FR;
Alain Bosella, Epinay S/Orge, FR;
Pierre Briere, Rueil Malmaison, FR;
Thomson - CSF, Puteaux, FR;
Abstract
The present invention concerns a transistor of semiconductor materials of the 3-5 group on silicon of the type comprising a silicon substrate, at least one layer of semi-insulating 3-5 material and several doped layers of 3-5 group semiconductor material in which is defined at least one conducting channel equipped with a gate metallization, each channel being situated between two access regions alternately known as source and drain, each source and drain regions with a metallization, one of the two access regions to a channel being electrically and thermally connected to the silicon substrate. In accordance with the invention, the transistor comprises between the silicon substrate and the semi-insulating layer of 3-5 group semiconductor material, at least one buffer layer of intrinsic silicon.