The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 1986
Filed:
Jun. 27, 1984
Applicant:
Inventor:
Pierre Briere, Rueil Malmaison, FR;
Assignee:
Thomson-CSF, Paris, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
29571 ; 2957 / ; 29578 ; 148-15 ; 357 22 ;
Abstract
According to this process, P.sup.+ type parallel bars are implanted in a N type silicon substrate. Thereafter an oxidation above the implanted zones is carried out, then a uniform layer of polycrystalline silicon is deposited that contacts the N type silicon substrate by being directly isolated from the P.sup.+ type grid bars. The present invention allows to manufacture particularly miniaturized vertical junction field-effect transistor structures by a simple process.
Briere, Pierre. (1986). Process of manufacturing a high-frequency vertical junction field-effect (U.S. Patent No. 4586239). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4586239
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile